Study of annealing condition of InSbN alloys fabricated by ion implantation

InSbN alloys are the new narrow bandgap semiconductors capable of broadband and long wavelength infrared photodetection. This paper reports the annealing conditions on the properties and quality of InSbN alloys, fabricated by multi-step ion implantation. The InSbN samples were annealed at different annealing methods, temperatures, and periods of time. They were characterized by various techniques, such as x-ray photoelectron spectroscopy and x-ray diffraction. It is found that the low-temperature-long-time annealing was better for defects elimination, while high-temperature-short-time annealing made more nitrogen activated. With the experimental data, detailed bonding of nitrogen in the alloys and their effects on the quality and properties can be achieved.