Comprehensive hydrodynamic simulation of an industrial SiGe heterobipolar transistor

Author

Bartels, M. ; Decker, S. ; Neinhus, B. ; Bach, K.H. ; Schuppen, A. ; Meinerzhagen, B.

Author_Institution

Inst. fur Theor. Elektrotech. und Mikrolektronik, Bremen Univ., Germany

fYear

1999

fDate

1999

Firstpage

105

Lastpage

108

Abstract

Based on SIMS and CV profile measurements and transport parameters derived from Monte Carlo simulations, the generalized hydrodynamic model agrees very well with experimental data for collector current, ideality factor, Early voltage, open-base collector/emitter breakdown voltage, and cutoff frequency. To the authors´ best knowledge this is the first time that such a comprehensive verification could be demonstrated for an industrial SiGe HBT and a hydrodynamic model

Keywords

Ge-Si alloys; Monte Carlo methods; heterojunction bipolar transistors; semiconductor device breakdown; semiconductor device models; semiconductor materials; CV profile measurements; Early voltage; Monte Carlo simulations; SIMS; SiGe heterobipolar transistor; collector current; cutoff frequency; hydrodynamic simulation; ideality factor; industrial SiGe HBT; open-base collector/emitter breakdown voltage; transport parameters; Application software; Data mining; Germanium silicon alloys; Heterojunction bipolar transistors; High definition video; Hydrodynamics; Numerical models; Predictive models; Robustness; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999

Conference_Location

Minneapolis, MN

ISSN

1088-5714-0

Print_ISBN

0-7803-5712-4

Type

conf

DOI

10.1109/BIPOL.1999.803537

Filename

803537