Title :
Comprehensive hydrodynamic simulation of an industrial SiGe heterobipolar transistor
Author :
Bartels, M. ; Decker, S. ; Neinhus, B. ; Bach, K.H. ; Schuppen, A. ; Meinerzhagen, B.
Author_Institution :
Inst. fur Theor. Elektrotech. und Mikrolektronik, Bremen Univ., Germany
Abstract :
Based on SIMS and CV profile measurements and transport parameters derived from Monte Carlo simulations, the generalized hydrodynamic model agrees very well with experimental data for collector current, ideality factor, Early voltage, open-base collector/emitter breakdown voltage, and cutoff frequency. To the authors´ best knowledge this is the first time that such a comprehensive verification could be demonstrated for an industrial SiGe HBT and a hydrodynamic model
Keywords :
Ge-Si alloys; Monte Carlo methods; heterojunction bipolar transistors; semiconductor device breakdown; semiconductor device models; semiconductor materials; CV profile measurements; Early voltage; Monte Carlo simulations; SIMS; SiGe heterobipolar transistor; collector current; cutoff frequency; hydrodynamic simulation; ideality factor; industrial SiGe HBT; open-base collector/emitter breakdown voltage; transport parameters; Application software; Data mining; Germanium silicon alloys; Heterojunction bipolar transistors; High definition video; Hydrodynamics; Numerical models; Predictive models; Robustness; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5712-4
DOI :
10.1109/BIPOL.1999.803537
