Title :
BiCMOS6G: a high performance 0.35 μm SiGe BiCMOS technology for wireless applications
Author :
Monroy, A. ; Laurens, M. ; Marty, M. ; Dutartre, D. ; Gloria, D. ; Carbonero, J.L. ; Perrotin, A. ; Roche, M. ; Chantre, A.
Author_Institution :
Centre Commun. CNET, Crolles, France
Abstract :
BiCMOS6G, a 200 mm 0.35 μm SiGe BiCMOS technology, is presented. This technology features a low complexity double-poly SiGe HBT with 60 GHz fmax, added to stand-alone CMOS and high-quality passive components. It is ideally suited to the development of highly integrated wireless communications circuits
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC; UHF integrated circuits; integrated circuit technology; 0.35 micron; 200 mm; 60 GHz; BiCMOS6G; CMOS components; SiGe; SiGe BiCMOS technology; double-poly SiGe HBT; high performance BiCMOS technology; high-quality passive components; integrated wireless communications circuits; low complexity SiGe HBT; wireless applications; BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Integrated circuit technology; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5712-4
DOI :
10.1109/BIPOL.1999.803540
