Title :
BC35: a 0.35 μm, 30 GHz production RF BiCMOS technology
Author :
Racanelli, Marco ; Zhang, Zhe ; Zheng, Jie ; Kar-Roy, Arjun ; Joshi, Pankaj ; Kalburge, Amol ; Nathawad, Lalit ; Todd, Michael ; Ukah, Clement ; Hu, Chun ; Compton, Cory ; Schuegraf, Klaus ; Ye, Peihua ; Dowlatshahi, Reza ; Jolly, Gurvinder ; Kempf, Paul
Author_Institution :
Conexant Syst., Newport Beach, CA, USA
Abstract :
BC35, a 0.35 μm RF BiCMOS production process on 200 mm wafers is described. BC35 includes 0.35 μm CMOS, RF passive elements and two NPNs with peak Ft of 32 and 23 GHz, peak Fmax of 74 and 50 GHz and BVceo of 3.8 and 6.2 V respectively. Enhancements to this production process are also described including the addition of a SiGe epi base to increase peak Ft to 53 GHz and the reduction of emitter width to achieve a 2 GHz NFmin of 0.69 dB
Keywords :
BiCMOS integrated circuits; MMIC; UHF integrated circuits; integrated circuit technology; 0.35 micron; 0.69 dB; 2 to 74 GHz; 200 mm; 3.8 V; 6.2 V; BC35 process; NPN devices; RF passive elements; SiGe epi base; emitter width reduction; production RF BiCMOS technology; production process enhancements; BiCMOS integrated circuits; CMOS process; Capacitance; Implants; MIM capacitors; Pattern matching; Production; Radio frequency; Surface topography; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5712-4
DOI :
10.1109/BIPOL.1999.803541
