Title :
The Instability of n-type LTPS TFTs Alternately operated in OFF region with drain biased
Author :
Liu, Han-Wen ; Chiou, Si-Ming ; Wang, Fang-Hsing
Author_Institution :
Dept. of Electr. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
Abstract :
The instability characteristics of n-type low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) which are dynamically stressed in the OFF region with drain biased is investigated. Through the gate dynamically stressed in the OFF state with negative drain dc bias, the degradation mechanism of TFTs could be clarified and the defects are mainly generated in the source region. The higher the gate pulse frequency is, the more the TFTs devices degrade. A degradation model is proposed to explain the degradation mechanism of LTPS TFTs, according to three electrical measuring items, including the sampling currents, saturation forward & reverse I-V (FR-IV) transfer curves and C-V curves.
Keywords :
elemental semiconductors; semiconductor device reliability; silicon; thin film transistors; C-V curves; OFF region; Si; degradation mechanism; drain biased; electrical measuring items; gate pulse frequency; n-type low-temperature polycrystalline silicon thin-film transistors; negative drain dc bias; sampling currents; saturation forward reverse I-V transfer curves; Circuits; Degradation; Electrodes; Frequency; PIN photodiodes; Silicon; Stress; Thin film transistors; Transconductance; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5596-6
DOI :
10.1109/IPFA.2010.5532232
