Title :
Reliability and breakdown characteristics of HfO2-based GaAs metal-oxide-semiconductor capacitors with a thin Si interface layer
Author :
Das, T. ; Mahata, C. ; Dalapati, G.K. ; Chi, D. ; Sutradhar, G. ; Bose, P.K. ; Maiti, C.K.
Author_Institution :
Dept. of Electron. & ECE, Indian Inst. of Technol., Kharagpur, India
Abstract :
The electrical characteristics and reliability of HfO2-based p-GaAs metal-oxide-semiconductor (MOS) capacitors (EOT: 2.4 nm to 4.8 nm) with a thin Silicon (Si) interfacial passivation layer (IPL) have been investigated with different thicknesses of HfO2. SILC generation kinetics and flat band instability were investigated via CVS and CCS measurements. In addition, breakdown voltages of gate oxide according to different thicknesses of HfO2 were studied. It is found that an optimum Si IPL and a thin HfO2 layer are essential to improve reliability characteristics of GaAs MOS capacitors which will enable gate oxide scaling down in GaAs system.
Keywords :
III-V semiconductors; MOS capacitors; electric breakdown; elemental semiconductors; gallium arsenide; hafnium compounds; passivation; semiconductor device reliability; silicon; GaAs; HfO2; Si; breakdown voltages; electric breakdown characteristics; flat band instability; gate oxide scaling; metal-oxide-semiconductor capacitor reliability; p-GaAs MOS capacitors; thin Si interface layer; thin silicon interfacial passivation layer; Capacitance-voltage characteristics; Dielectrics; Electric breakdown; Gallium arsenide; Hafnium oxide; III-V semiconductor materials; MOS capacitors; Passivation; Sputtering; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5596-6
DOI :
10.1109/IPFA.2010.5532235
