DocumentCode
3299972
Title
High Q inductors in a SiGe BiMOS process utilizing a thick metal process add-on module
Author
Groves, Rob ; Malinowski, John ; Volant, Rich ; Jadus, Dale
Author_Institution
IBM Microelectron., Hopewell Junction, NY, USA
fYear
1999
fDate
1999
Firstpage
149
Lastpage
152
Abstract
Design tradeoffs for the optimization of inductor Q have been analyzed, and thick metallization has been identified as the most promising technology enhancement. Peak Qs approaching 19 have been demonstrated using thick metal
Keywords
BIMOS integrated circuits; Ge-Si alloys; MMIC; Q-factor; UHF integrated circuits; inductors; integrated circuit design; integrated circuit metallisation; semiconductor materials; BiMOS process; SiGe; design tradeoffs; high Q inductors; inductor Q optimisation; metallization; technology enhancement; thick metal process add-on module; BiCMOS integrated circuits; Conductivity; Dielectric substrates; Germanium silicon alloys; Inductors; Metallization; Radio frequency; Radiofrequency integrated circuits; Silicon germanium; Spirals;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location
Minneapolis, MN
ISSN
1088-5714-0
Print_ISBN
0-7803-5712-4
Type
conf
DOI
10.1109/BIPOL.1999.803547
Filename
803547
Link To Document