Optimum doping for n+p silicon solar cell and the J-V characteristic

To fabricate a good solar cell, doping concentration play a role. As such, right doping concentration selection is necessary to produce high output value and then contribute to high efficiency. As starting material used are monocrystalline Cz p-type (100) silicon wafer with a resistivity of about 1 Ω.cm [1] and were polished on one side [2]. On the polished side, by using plasma chamber n-layer were doped on p-type wafer to produced n⁺p silicon solar cell. The source that we used here is phosphorus solid source with time and temperature control in the present of flowing gas [3]. Temperature was set up to 1000 °C and the silicon wafer was doped for 55 minutes. The flowing gas used is nitrogen with pressure 2 litre/minute [4]. The source was placed face to face with the wafer in the furnace. After the process, wafer was taken out slowly from the furnace to avoid thermal shock with the environment [5]. By choosing the right doping concentration values, it will give low resistivity as well as increasing the output values [6] which is 527 mV for voltage and 28.8 mA/cm² for current. The output values were measured by using IV measurement and also from the circuit. All the processes were done in Nano-Optoelectronics Research Lab.