Title :
A monolithic SiGe power amplifier for dual-mode (CDMA/AMPS) cellular handset applications
Author :
Tseng, P.D. ; Zhang, L.Y. ; Gao, G.B. ; Chang, M.F.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
A dual-mode (CDMA/AMPS) power amplifier has been successfully implemented by using a monolithic SiGe-Si HBT foundry process for cellular handset (824-849 MHz) applications. The designed two-stage power amplifier satisfies both CDMA and AMPS requirements in output power, linearity and efficiency. At Vcc>4.2 V, the power amplifier shows an excellent linearity (1st ACPR<-44.1 dBc and 2nd ACPR <-57.1 dBc) up to 28 dBm output power for CDMA applications. Biased at the same Vcc, the power amplifier also meets AMPS requirements in maximum output power (31 dBm) and linearity (with 2nd and 3rd harmonic to fundamental ratios lower than -40 dBc and -60 dBc, respectively)
Keywords :
Ge-Si alloys; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; bipolar MMIC; bipolar analogue integrated circuits; cellular radio; code division multiple access; heterojunction bipolar transistors; semiconductor materials; telephone sets; 4.2 V; 824 to 849 MHz; AMPS requirements; CDMA applications; CDMA/AMPS cellular handset; SiGe-Si; dual-mode cellular handset applications; efficiency; linearity; monolithic SiGe power amplifier; monolithic SiGe/Si HBT foundry process; output power; two-stage power amplifier; Foundries; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Multiaccess communication; Power amplifiers; Power generation; Power system harmonics; Silicon germanium; Telephone sets;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5712-4
DOI :
10.1109/BIPOL.1999.803548
