InP/InGaAs heterojunction bipolar transistor circuits for high bit-rate ETDM transmission systems

Author

André, Ph ; Kauffmann, N. ; Desrousseaux, P. ; Riet, M. ; Konczykowska, A. ; Godin, J.

Author_Institution

Groupement d´´Interet Econ., OPTO+, Marcoussis, France

fYear

1999

fDate

1999

Firstpage

173

Lastpage

176

Abstract

Several ICs based on InP/InGaAs DHBT technology and suitable for future 40 Gb/s ETDM optical transmission systems are presented. More than 25 Gb/s operation has been obtained with an MS-DFF circuit, latched and double-latched multiplexer. A 28 GHz static frequency divider and a 46 Gb/s MUX are reported. Finally, a MUX-driver able to supply 2 Vpp at 40 Gb/s is presented. The experimental results obtained, in the state of the art, demonstrate the strong potential of the InP-based HBT technology

Keywords

III-V semiconductors; bipolar digital integrated circuits; digital communication; driver circuits; emitter-coupled logic; flip-flops; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; multiplexing equipment; optical communication equipment; very high speed integrated circuits; 25 to 46 Gbit/s; 28 GHz; DHBT technology; ECL; InP-InGaAs; InP-based HBT technology; InP/InGaAs HBT circuits; MS-DFF circuit; MUX-driver; VHSIC; double-latched multiplexer; heterojunction bipolar transistor circuits; high bit-rate ETDM transmission systems; latched multiplexer; master-slave D-type flip-flops; optical transmission systems; static frequency divider; Clocks; DH-HEMTs; Heterojunction bipolar transistors; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Integrated circuit technology; Master-slave; Multiplexing; Very high speed integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999

Conference_Location

Minneapolis, MN

ISSN

1088-5714-0

Print_ISBN

0-7803-5712-4

Type

conf

DOI

10.1109/BIPOL.1999.803553

Filename

803553