DocumentCode
3300096
Title
Advanced direct contact via (DCV) process with Ta/TaN/Ta tri-layer barrier for advanced BEOL dual damascene Cu interconnects
Author
Deng, F.X. ; Zhang, D.H. ; Liao, Haitao ; Hu, H.
Author_Institution
United Microelectron. Corp. (Singapore Branch), Singapore, Singapore
fYear
2010
fDate
5-9 July 2010
Firstpage
1
Lastpage
4
Abstract
Three advanced direct contact via processes with Ta/TaN/Ta tri-layer barrier and the electromigration of their structures were comparatively investigated. The process of Ar+ resputtering with median removal of tri-layer barrier shows the lowest defective die percentage. It also shows the highest activation energy and longest downstream electromigration lifetime.
Keywords
electromigration; interconnections; tantalum; Ta-TaN-Ta; activation energy; advanced BEOL dual damascene interconnects; advanced direct contact via process; back end of line; downstream electromigration lifetime; trilayer barrier; Adhesives; Argon; Cathodes; Contact resistance; Electromigration; Electrons; Life testing; Microelectronics; Performance evaluation; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location
Singapore
ISSN
1946-1542
Print_ISBN
978-1-4244-5596-6
Type
conf
DOI
10.1109/IPFA.2010.5532243
Filename
5532243
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