High-frequency mode-beating in distributed feedback laser with a semiconductor optical amplifier

Author

Biwei Pan ; Liqiang Yu ; Lingjuan Zhao

Author_Institution

Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China

fYear

2013

fDate

26-28 July 2013

Firstpage

1

Lastpage

3

Abstract

A monolithic semiconductor laser, which can generate high frequency mode-beating over 100GHz, is reported. This laser employs a semiconductor optical amplifier (SOA) as the integrated feedback cavity of a complex-coupled distributed feedback laser (DFB). Stable dual-mode emission, with low strength difference is demonstrated. Mode-beating frequency of this laser can be tuned from 87.41 to 103.64 GHz, when the currents injected into each laser section are adjusted. In all frequency range, the strength difference of two main modes is smaller than 10 dB and the strength of the other side mode is 20 dB lower than the two main modes.

Keywords

distributed feedback lasers; laser frequency stability; laser mode locking; laser tuning; semiconductor optical amplifiers; DFB laser; SOA; complex-coupled distributed feedback laser; frequency 87.41 GHz to 103.64 GHz; high frequency mode beating; integrated feedback cavity; laser section; low strength difference; monolithic semiconductor laser; semiconductor optical amplifier; stable dual mode emission; Distributed feedback devices; Laser feedback; Laser modes; Laser theory; Laser tuning; Semiconductor optical amplifiers; Distributed feedback lasers; dual-wavelength; high frequency mode-beating; optical microwave generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communications and Networks (ICOCN), 2013 12th International Conference on

Conference_Location

Chengdu

Type

conf

DOI

10.1109/ICOCN.2013.6617227

Filename

6617227