• DocumentCode
    3300174
  • Title

    Effects of structure parameters on time response and power-current characteristics of InGaN/GaN single quantum well laser by solving rate equations

  • Author

    Alahyarizadeh, Ghasem ; Aghajani, Hassan ; Mahmodi, Hadi ; Rahmani, Raheleh ; Hassan, Zainuriah

  • Author_Institution
    Nano-Optoelectron. Res. & Technol. Lab., Univ. Sains Malaysia, Minden, Malaysia
  • fYear
    2012
  • fDate
    5-7 Jan. 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    There are several equation sets that are used to characterize of the performance parameters of a quantum well (QW) lasers. One of simple and important equations groups which are used to study of laser characteristics in the almost powerful and expensive simulation tools such as Crosslight, ISE TCAD and SILVACO is of rate equations. A numerical analysis of rate equations is a powerful tool to study of carriers and photons behavior in the semiconductor lasers. The differential rate equations are used to estimate simulated and spontaneous emissions of laser in the all semiconductor simulation softwares [1-7]. A new visual and analytical model to study effects of structure parameters on laser performance of InGaN single quantum well lasers based on solving rate equations by using user friendly programming software, Delphi, is presented. This model has provided a graphical user interface (GUI) for researchers by which one can work directly with all laser parameters throughout the simulation work and analysis without the need to access source code[1]. We have investigated effects of different parameters such as quantum well thickness, separate confinement heterostructure (SCH) thickness and cavity length on the principle characteristics of the laser which include laser time response (P-t), and output power-current (P-I) characteristics. Meanwhile related features such as turn-on delay time of lasing, threshold current and slope efficiency have been investigated. Figure 2 shows the graphical user interface (GUI) of the main program, which uses to input parameters such as QW and SCH thickness and etc. Simulation results of P-I characteristics of InGaN SQW laser with our software has shown in figure 2. Also figure 3 shows the P-t characteristics of the simulated InGaN SQW laser. In conclusion, the presented work demonstrates a new visual, open source and analytical model based on solving rate equations by user friendly Delphi programming software. Our model in comparison wi- h other analytical software and expensive simulators provides directly access to the parameters of lasers throughout the simulation and analysis.
  • Keywords
    III-V semiconductors; gallium compounds; graphical user interfaces; indium compounds; quantum well lasers; wide band gap semiconductors; Delphi programming software; GUI; InGaN-GaN; graphical user interface; output power-current properties; rate equations; separate confinement heterostructure; single quantum well laser; structure parameters; turn-on delay-time-of-lasing; Analytical models; Equations; Laser modes; Mathematical model; Power lasers; Semiconductor lasers; Software; Delphi; InGaN/GaN; fourth-order Runge-kutta method; quantum well laser; rate equations;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Enabling Science and Nanotechnology (ESciNano), 2012 International Conference on
  • Conference_Location
    Johor Bahru
  • Print_ISBN
    978-1-4577-0799-5
  • Type

    conf

  • DOI
    10.1109/ESciNano.2012.6149649
  • Filename
    6149649