DocumentCode
3300213
Title
Defect localization using photon emission microscopy analysis with the combination of OBIRCH analysis
Author
Chunlei, Wu ; Zhai, Linda ; Wang, Winter ; Song, Grace ; Jinglong, Li ; Joe, Yu ; Motohiko, Masuda
Author_Institution
Freescale Semicond. (China) Ltd., Tianjin, China
fYear
2010
fDate
5-9 July 2010
Firstpage
1
Lastpage
6
Abstract
Photon emission microscopy analysis with the combination of OBIRCH analysis are very effective for defect localization, which can decrease analysis cycle time and improve success rates remarkably. In this paper, some cases are presented to show how to locate defects quickly by photon emission microscopy analysis with the combination of OBIRCH analysis.
Keywords
crystal defects; failure analysis; photoelectron microscopy; OBIRCH analysis; defect localization; photon emission microscopy; Bridges; Computer aided software engineering; Failure analysis; Iron; Leak detection; MOS devices; Microcontrollers; Optical microscopy; Photonic integrated circuits; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location
Singapore
ISSN
1946-1542
Print_ISBN
978-1-4244-5596-6
Type
conf
DOI
10.1109/IPFA.2010.5532247
Filename
5532247
Link To Document