The effect of Al mole fraction of DBRs on the GaN-based VCSELs performance

Nitride-based wide-bangap ternary alloys are ideal for fabrication of light-emitting devices such as light emitting diodes (LEDs), laser diodes (LD) and vertical cavity surface emitting lasers (VCSELs). The semiconductor lasers based on wide-gap GaN, AlN and InN semiconductor materials and their solid solutions are very attractive due to their potential applications in full-color displays and high density optical storage [1]. The bandgaps of III-nitride materials are direct, and they cover a very large energy scale at room temperature, therefore they have become essential materials for semiconductor devices because of their excellent mechanical strength [2].