DocumentCode
3300971
Title
Structural and optical properties of ZnO thin film prepared by oxidation of Zn metal powders
Author
Hassan, N.K. ; Hashim, M.R.
Author_Institution
Nano-Optoelectron. Res. Lab., Univ. Sains Malaysia, Minden, Malaysia
fYear
2012
fDate
5-7 Jan. 2012
Firstpage
1
Lastpage
2
Abstract
The zinc oxide(ZnO), wide direct band-gap (3.37 eV), is a promising material for short wavelength optoelectronic devices, especially for ultraviolet (UV) light-emitting diodes (LEDs) and laser diodes (LDs), due to its large exciton binding energy of 60 meV [1-4]. For device applications, such as high efficiency UV light emitting devices, it is important to suppress the visible emission.
Keywords
II-VI semiconductors; binding energy; oxidation; photoluminescence; semiconductor growth; semiconductor thin films; vacuum deposition; wide band gap semiconductors; zinc compounds; ZnO; large exciton binding energy; laser diode; metal powders; optical properties; optoelectronic device; oxidation; structural properties; thin film; ultraviolet light-emitting diode; visible emission; Green products; Light emitting diodes; Nanotechnology; Oxidation; X-ray scattering; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Enabling Science and Nanotechnology (ESciNano), 2012 International Conference on
Conference_Location
Johor Bahru
Print_ISBN
978-1-4577-0799-5
Type
conf
DOI
10.1109/ESciNano.2012.6149685
Filename
6149685
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