DocumentCode :
3301062
Title :
CMOS ISFET microsystem for biomedical applications
Author :
Chodavarapu, V.P. ; Titus, A.H. ; Cartwright, A.N.
Author_Institution :
Dept. of Electr. Eng., New York State Univ., Buffalo, NY
fYear :
2005
fDate :
Oct. 30 2005-Nov. 3 2005
Abstract :
The development of a novel differential readout architecture for CMOS ion-sensitive field-effect transistor-based (ISFETs) microsystems is described. The ISFETs are fabricated using a standard CMOS process. A differential measurement between two ISFET operational transconductance amplifiers (IOTAs), and a gold wire as a pseudo reference electrode, is used to monitor pH changes. Specifically, these two IOTAs have different pH sensitivities, a function of the size of two MOSFETs in the two IOTAs. The microsystem uses silicon nitride (Si3N4) as the pH sensitive layer and has a sensitivity of 40-45 mV/pH. The ISFET layout uses an extended gate approach that reduces leakage, drift and packaging constraints. The microsystem provides a low cost, low power and disposable pH monitoring platform for biomedical applications
Keywords :
biomedical electrodes; biosensors; chemical sensors; ion sensitive field effect transistors; pH measurement; silicon compounds; CMOS ISFET microsystem; MOSFET; Si3N4; biomedical applications; differential readout architecture; gold wire; operational transconductance amplifiers; pH monitoring platform; pH sensitivities; pseudo reference electrode; silicon nitride; Biomedical electrodes; Biomedical measurements; Biomedical monitoring; CMOS process; Differential amplifiers; Gold; MOSFETs; Operational amplifiers; Transconductance; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2005 IEEE
Conference_Location :
Irvine, CA
Print_ISBN :
0-7803-9056-3
Type :
conf
DOI :
10.1109/ICSENS.2005.1597648
Filename :
1597648
Link To Document :
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