AlGaN/GaN microwave power HEMT´s

Author

Eastman, L.F.

Author_Institution

Cornell Univ., Ithaca, NY, USA

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

15

Lastpage

18

Abstract

High average microwave power output density has been observed with AlGaN/GaN HEMT´s grown on sapphire substrates, reaching 4.0 W/mm with 49% power-added efficiency for single gates, and 1.8 W/mm with 78% power-added efficiency for multiple gates. Using SiC substrates, an order of magnitude more heat can be removed. The breakdown electric field in the GaN channel is /spl sim/3 MV/cm, 7.5 times that of GaAs. The average transit velocity is 1-1.2/spl times/10/sup 7/ cm/s, allowing an intrinsic f/sub t/ as high as 94 GHz for 0.15 /spl mu/m gate length.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device breakdown; wide band gap semiconductors; 0.15 micron; 49 to 78 percent; 94 GHz; Al/sub 2/O/sub 3/; AlGaN-GaN; GaN channel; SiC; SiC substrates; breakdown electric field; microwave power HEMT; microwave power output density; sapphire substrates; Aluminum gallium nitride; Electric breakdown; Electromagnetic heating; Electrons; Gallium arsenide; Gallium nitride; HEMTs; Microwave devices; Silicon carbide; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 1999. 21st Annual

Conference_Location

Monterey, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5585-7

Type

conf

DOI

10.1109/GAAS.1999.803718

Filename

803718