Title :
Ramp-up of first SiGe circuits for mobile communications: positioning of SiGe vs. GaAs and silicon
Author :
Klepser, B.-U. ; Klein, W.
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
This paper reviews the current competition and potential of GaAs, SiGe and Si components in DECT, GSM, CDMA and PDC wireless communication systems. Results of the first products designed in a SiGe bipolar technology, e.g. dual band low noise amplifiers and PLL prescalers, are presented.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; bipolar integrated circuits; code division multiple access; cordless telephone systems; mobile communication; phase locked loops; prescalers; semiconductor materials; CDMA communication systems; DECT; GSM; PDC wireless communication systems; PLL prescalers; SiGe; SiGe bipolar technology; SiGe circuits; dual band LNA; low noise amplifiers; mobile communications; Circuits; Dual band; GSM; Gallium arsenide; Germanium silicon alloys; Mobile communication; Multiaccess communication; Product design; Silicon germanium; Wireless communication;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803722
