Hydrothermal growth and field emission properties of ZnO nanotube arrays

Author

Li-An Ma ; Guo, Tai-Liang

Author_Institution

Dept. of Mater. Sci. & Eng., Fujian Univ. of Technol., Fuzhou, China

fYear

2010

fDate

12-15 Oct. 2010

Firstpage

380

Lastpage

382

Abstract

Highly aligned ZnO nanotube array films on the conducting substrates have been synthesized by a simple hydrothermal method. The as-synthesized ZnO nanotubes have diameters of 300-400nm and lengths of 7μm (the aspect ratios of ~20). The field emission of ZnO nanotube array films shows a turn-on field of about 4.6V/μm at a current density of 1μA/cm and emission current density up to about 0.22mA/cm² at a bias field of 8.25V/μm. These result suggest that the relatively low the aspect ratios of the ZnO nanotue can posses strong field emission characteristics.

Keywords

II-VI semiconductors; crystal growth from solution; current density; field emission; nanofabrication; semiconductor growth; semiconductor nanotubes; semiconductor thin films; wide band gap semiconductors; zinc compounds; ZnO; conducting substrates; current density; field emission properties; hydrothermal growth; hydrothermal method; nanotube array films; size 300 nm to 400 nm; strong field emission; Current density; Glass; Indium tin oxide; Scanning electron microscopy; Substrates; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference (NMDC), 2010 IEEE

Conference_Location

Monterey, CA

Print_ISBN

978-1-4244-8896-4

Type

conf

DOI

10.1109/NMDC.2010.5649603

Filename

5649603