Title :
High-speed, low-power digital and analog circuits implemented in IBM SiGe BiCMOS technology
Author :
Fritz, K.E. ; Randall, B.A. ; Fokken, G.J. ; Walters, W.L. ; Lorsung, M.J. ; Nielsen, A.D. ; Prairie, J.F. ; Post, D.J. ; Greenberg, D.R. ; Gilbert, B.K.
Author_Institution :
Special Purpose Processor Dev. Group, Mayo Found., Rochester, MN, USA
Abstract :
Under the auspices of Defense Advanced Research Project Agency Microsystems Technology Office (DARPA/MTO) Low Power Electronics Program, the Mayo Foundation is exploring ways to reduce circuit power consumption, while maintaining or increasing functionality, for existing military systems. Applications presently being explored by Mayo include all-digital radar receivers, electronic warfare receivers, and other types of digital signal processors. One of the integrated circuit technologies currently under investigation by Mayo to support such military systems is the IBM Corporation silicon germanium (SiGe) BiCMOS process. In this paper, design methodology and test results from demonstration circuits developed for these applications and implemented in the IBM SiGe BiCMOS technology are presented.
Keywords :
BiCMOS analogue integrated circuits; BiCMOS digital integrated circuits; Ge-Si alloys; high-speed integrated circuits; integrated circuit design; integrated circuit technology; low-power electronics; military equipment; semiconductor materials; DARPA; IBM technology; SiGe; SiGe BiCMOS process; analog circuits; circuit power consumption reduction; design methodology; digital circuits; digital signal processors; electronic warfare receiver; high-speed ICs; low-power ICs; military systems; radar receivers; Analog circuits; BiCMOS integrated circuits; Circuit testing; Energy consumption; Germanium silicon alloys; Integrated circuit technology; Low power electronics; Radar applications; Radar signal processing; Silicon germanium;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803723
