Wide-bandgap-semiconductor wide-bandwidth wide-temperature-range power amplifiers

Author

Hwang, James C. M.

Author_Institution

Lehigh Univ., Bethlehem, PA, USA

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

51

Lastpage

54

Abstract

A wide-bandwidth and wide-temperature-range power amplifier has been demonstrated by using a GaN/AlGaN-on-SiC HEMT. With a fixed bias and without any load tuning, the amplifier exhibits useful and uniform performance across the band of 6 to 12 GHz and the temperature range of 78 to 400 K. These results demonstrate the potential of wide-bandgap semiconductors for robust power amplification. The potential for high-power, narrow-bandwidth, and regulated-temperature applications are also discussed.

Keywords

HEMT circuits; III-V semiconductors; aluminium compounds; circuit tuning; gallium arsenide; gallium compounds; microwave circuits; microwave power amplifiers; semiconductor materials; silicon compounds; wide band gap semiconductors; 6 to 12 GHz; 78 to 400 K; GaN-AlGaN-SiC; GaN/AlGaN-on-SiC; HEMT; III-V semiconductors; fixed bias; load tuning; regulated-temperature applications; wide-bandgap-semiconductor; wide-bandwidth power amplifiers; wide-temperature-range power amplifiers; Broadband amplifiers; Calibration; Cryogenics; HEMTs; Impedance; Power amplifiers; Probes; Radiofrequency amplifiers; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 1999. 21st Annual

Conference_Location

Monterey, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5585-7

Type

conf

DOI

10.1109/GAAS.1999.803725

Filename

803725