Title :
Inclusion of topside metal heat spreading in the determination of HBT temperatures by electrical and geometrical methods [GaAs devices]
Author_Institution :
Hewlett-Packard Co., Santa Rosa, CA, USA
Abstract :
Topside metal helps spread the heat dissipated by HBTs and reduces both the thermal resistance at a given temperature, and its temperature dependence. In this paper we describe new methods for including topside metal cooling effects in both an electrical method of extracting HBT temperature and a geometry-based method for calculating HBT temperatures.
Keywords :
III-V semiconductors; cooling; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; thermal resistance; GaAs; HBT temperatures; III-V semiconductors; cooling effects; electrical methods; geometrical methods; temperature dependence; thermal resistance; topside metal heat spreading; Cooling; Curve fitting; Electric resistance; Heterojunction bipolar transistors; Resistance heating; Temperature dependence; Temperature distribution; Temperature sensors; Thermal conductivity; Thermal resistance;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803727
