DocumentCode
3301233
Title
Inclusion of topside metal heat spreading in the determination of HBT temperatures by electrical and geometrical methods [GaAs devices]
Author
Yeats, B.
Author_Institution
Hewlett-Packard Co., Santa Rosa, CA, USA
fYear
1999
fDate
17-20 Oct. 1999
Firstpage
59
Lastpage
62
Abstract
Topside metal helps spread the heat dissipated by HBTs and reduces both the thermal resistance at a given temperature, and its temperature dependence. In this paper we describe new methods for including topside metal cooling effects in both an electrical method of extracting HBT temperature and a geometry-based method for calculating HBT temperatures.
Keywords
III-V semiconductors; cooling; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; thermal resistance; GaAs; HBT temperatures; III-V semiconductors; cooling effects; electrical methods; geometrical methods; temperature dependence; thermal resistance; topside metal heat spreading; Cooling; Curve fitting; Electric resistance; Heterojunction bipolar transistors; Resistance heating; Temperature dependence; Temperature distribution; Temperature sensors; Thermal conductivity; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs IC Symposium, 1999. 21st Annual
Conference_Location
Monterey, CA, USA
ISSN
1064-7775
Print_ISBN
0-7803-5585-7
Type
conf
DOI
10.1109/GAAS.1999.803727
Filename
803727
Link To Document