Title :
Power amplifier modeling issues and advancement in Japan
Author_Institution :
Dept. of Microwave Solid-State Eng., Toshiba Corp., Kawasaki, Japan
Abstract :
Modeling has been the most significant issue for developing microwave and millimeter-wave power amplifiers. This paper reviews current Japanese research activities on power amplifier modeling issues from the viewpoint of device modeling and high power device and circuit design, and discusses the status and progress of the topics.
Keywords :
equivalent circuits; microwave power amplifiers; microwave power transistors; millimetre wave power amplifiers; millimetre wave power transistors; network analysis; network synthesis; power semiconductor devices; semiconductor device models; FET; GaAs; HEMT; Japanese research activities; MM-wave power amplifiers; device modeling; high power circuit design; high power device design; microwave power amplifiers; power amplifier modeling; Circuit simulation; FETs; Gallium arsenide; High power amplifiers; Microwave amplifiers; Microwave devices; Millimeter wave circuits; Millimeter wave technology; Power amplifiers; Power generation;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803729
