DocumentCode
3301265
Title
Power amplifier modeling issues and advancement in Japan
Author
Watanabe, S.
Author_Institution
Dept. of Microwave Solid-State Eng., Toshiba Corp., Kawasaki, Japan
fYear
1999
fDate
17-20 Oct. 1999
Firstpage
69
Lastpage
72
Abstract
Modeling has been the most significant issue for developing microwave and millimeter-wave power amplifiers. This paper reviews current Japanese research activities on power amplifier modeling issues from the viewpoint of device modeling and high power device and circuit design, and discusses the status and progress of the topics.
Keywords
equivalent circuits; microwave power amplifiers; microwave power transistors; millimetre wave power amplifiers; millimetre wave power transistors; network analysis; network synthesis; power semiconductor devices; semiconductor device models; FET; GaAs; HEMT; Japanese research activities; MM-wave power amplifiers; device modeling; high power circuit design; high power device design; microwave power amplifiers; power amplifier modeling; Circuit simulation; FETs; Gallium arsenide; High power amplifiers; Microwave amplifiers; Microwave devices; Millimeter wave circuits; Millimeter wave technology; Power amplifiers; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs IC Symposium, 1999. 21st Annual
Conference_Location
Monterey, CA, USA
ISSN
1064-7775
Print_ISBN
0-7803-5585-7
Type
conf
DOI
10.1109/GAAS.1999.803729
Filename
803729
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