8 W C-band MMIC amplifier for space applications

Author

Loval, L. ; Darbandi, A. ; Buret, H. ; Soulard, M. ; Michard, F.

Author_Institution

Alcatel, Nanterre, France

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

77

Lastpage

80

Abstract

A very high efficiency, low distortion C-band MMIC amplifier using a linear and nonlinear models of the PHEMT devices has been developed. The double stage MMIC amplifier fabricated with 2/spl times/3.6 mm gate width PHEMT and 2/spl times/12 mm gate width PHEMT exhibits an output power of 39 dBm at 2 dB of gain compression, a linear gain of 27 dB and an associated PAE of 42% in the frequency range of 3.5-4.4 GHz. These excellent results are performed by developing an exact non-linear model of the PHEMT device and optimizing the matching network of the amplifier.

Keywords

HEMT integrated circuits; MMIC power amplifiers; field effect MMIC; impedance matching; integrated circuit design; 27 dB; 3.5 to 4.4 GHz; 42 percent; C-band MMIC amplifier; PHEMT devices; double stage configuration; high efficiency; linear models; low distortion; matching network optimisation; nonlinear models; space applications; Circuit simulation; Gain; High power amplifiers; MMICs; Nonlinear distortion; PHEMTs; Power amplifiers; Power generation; Pulse amplifiers; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 1999. 21st Annual

Conference_Location

Monterey, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5585-7

Type

conf

DOI

10.1109/GAAS.1999.803731

Filename

803731