Title :
8 W C-band MMIC amplifier for space applications
Author :
Loval, L. ; Darbandi, A. ; Buret, H. ; Soulard, M. ; Michard, F.
Author_Institution :
Alcatel, Nanterre, France
Abstract :
A very high efficiency, low distortion C-band MMIC amplifier using a linear and nonlinear models of the PHEMT devices has been developed. The double stage MMIC amplifier fabricated with 2/spl times/3.6 mm gate width PHEMT and 2/spl times/12 mm gate width PHEMT exhibits an output power of 39 dBm at 2 dB of gain compression, a linear gain of 27 dB and an associated PAE of 42% in the frequency range of 3.5-4.4 GHz. These excellent results are performed by developing an exact non-linear model of the PHEMT device and optimizing the matching network of the amplifier.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; field effect MMIC; impedance matching; integrated circuit design; 27 dB; 3.5 to 4.4 GHz; 42 percent; C-band MMIC amplifier; PHEMT devices; double stage configuration; high efficiency; linear models; low distortion; matching network optimisation; nonlinear models; space applications; Circuit simulation; Gain; High power amplifiers; MMICs; Nonlinear distortion; PHEMTs; Power amplifiers; Power generation; Pulse amplifiers; Radiofrequency amplifiers;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803731
