Quantum well infrared photodetectors

Author

Ahearn, J.S. ; Sundaram, M.

Author_Institution

Div. of Adv. Technol., Lockheed Martin Co., Nashua, NH, USA

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

87

Lastpage

90

Abstract

We summarize the current state of quantum well infrared photodetector (QWIP) focal plane array (FPA) technology. One-color longwave (LW) and midwave (MW) infrared FPAs in formats up to 640/spl times/480 are being produced by several groups. We recently demonstrated 2-color QWIP FPAs with spatially-registered simultaneous imagery. Our 2-color FPA architecture features 3 bumps/pixel to permit two vertically stacked QWIPs to be separately biased and the two photocurrents to be simultaneously integrated. We successfully applied this architecture to realize 2-color FPAs in three separate formats: LW/LW, MW/LW, and MW/MW. Fabrication and performance details are presented.

Keywords

colour; focal planes; infrared detectors; photodetectors; quantum well devices; semiconductor quantum wells; 307200 pixel; 480 pixel; 640 pixel; FPA technology; QW infrared photodetectors; QWIP; fabrication; focal plane array; photocurrents; quantum well IR photodetectors; two-colour FPA architecture; vertically stacked QWIPs; Atmospheric waves; Infrared detectors; Infrared imaging; Optical crosstalk; Optical device fabrication; Optical filters; Optical imaging; Photoconductivity; Photodetectors; Pixel;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 1999. 21st Annual

Conference_Location

Monterey, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5585-7

Type

conf

DOI

10.1109/GAAS.1999.803733

Filename

803733