High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40 Gb/s optical-fiber TDM links

Author

Mullrich, J. ; Mullner, E. ; Jensen, J.F. ; Stanchina, B. ; Kardos, M. ; Thurner, H. ; Rein, H.-M.

Author_Institution

Ruhr-Univ., Bochum, Germany

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

99

Lastpage

102

Abstract

A monolithic integrated transimpedance amplifier for the receiver in a 40 Gb/s optical-fiber TDM system has been fabricated in an InP-based HBT technology. Despite its high gain (transimpedance of 2 kB in the limiting mode, 10 k/spl Omega/ in the linear mode) the complete amplifier was realized on a single chip. Clear output eye diagrams were measured up to 43 Gb/s at the differential 50 /spl Omega/ output: under realistic driving conditions. The output voltage swing of 0.6 V/sub pp/ does not change within the demanded input dynamic range of 6 dB. At the upper input current level even 48 Gb/s was reached. The power consumption is approximately 600 mW at a single supply voltage of -5.5 V.

Keywords

cascade networks; differential amplifiers; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical fibre networks; optical receivers; time division multiplexing; -5.5 V; 10 kohm; 2 kohm; 40 Gbit/s; 600 mW; HBT technology; InP; differential amplifiers; driving conditions; eye diagrams; high-gain transimpedance amplifier; input dynamic range; limiting mode; linear mode; optical receiver; optical-fiber TDM links; output voltage swing; power consumption; upper input current level; Dynamic range; Heterojunction bipolar transistors; Integrated optics; Optical amplifiers; Optical receivers; Semiconductor device measurement; Semiconductor optical amplifiers; Stimulated emission; Time division multiplexing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 1999. 21st Annual

Conference_Location

Monterey, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5585-7

Type

conf

DOI

10.1109/GAAS.1999.803736

Filename

803736