Title :
High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40 Gb/s optical-fiber TDM links
Author :
Mullrich, J. ; Mullner, E. ; Jensen, J.F. ; Stanchina, B. ; Kardos, M. ; Thurner, H. ; Rein, H.-M.
Author_Institution :
Ruhr-Univ., Bochum, Germany
Abstract :
A monolithic integrated transimpedance amplifier for the receiver in a 40 Gb/s optical-fiber TDM system has been fabricated in an InP-based HBT technology. Despite its high gain (transimpedance of 2 kB in the limiting mode, 10 k/spl Omega/ in the linear mode) the complete amplifier was realized on a single chip. Clear output eye diagrams were measured up to 43 Gb/s at the differential 50 /spl Omega/ output: under realistic driving conditions. The output voltage swing of 0.6 V/sub pp/ does not change within the demanded input dynamic range of 6 dB. At the upper input current level even 48 Gb/s was reached. The power consumption is approximately 600 mW at a single supply voltage of -5.5 V.
Keywords :
cascade networks; differential amplifiers; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical fibre networks; optical receivers; time division multiplexing; -5.5 V; 10 kohm; 2 kohm; 40 Gbit/s; 600 mW; HBT technology; InP; differential amplifiers; driving conditions; eye diagrams; high-gain transimpedance amplifier; input dynamic range; limiting mode; linear mode; optical receiver; optical-fiber TDM links; output voltage swing; power consumption; upper input current level; Dynamic range; Heterojunction bipolar transistors; Integrated optics; Optical amplifiers; Optical receivers; Semiconductor device measurement; Semiconductor optical amplifiers; Stimulated emission; Time division multiplexing; Voltage;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803736
