A V-band drain injected/resistive dual-mode monolithic mixer

This paper is the first to report on a V-band dual-mode MMIC mixer that provides a drain injected mode and a resistive mode with the same MMIC design. This design allows the device´s impedances of a drain injected mode and a resistive mode to approach each other at a higher LO-power. The developed GaAs MMIC delivers excellent mixer performances in both modes at 60 GHz. It provides a 3.7 dB conversion gain and a 7.8 dB noise figure under 10 dBm LO power for the drain injection mode at a 61 GHz RF frequency, while providing a 7.7 dB conversion loss and a 9.8 dB noise figure under 0 dBm LO power for the resistive mode at a 60.6 GHz RF frequency.