A V-band drain injected/resistive dual-mode monolithic mixer

Author

Kashiwa, T. ; Katoh, T. ; Ishida, T. ; Ishika, T. ; Nakayama, Y.

Author_Institution

High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

117

Lastpage

120

Abstract

This paper is the first to report on a V-band dual-mode MMIC mixer that provides a drain injected mode and a resistive mode with the same MMIC design. This design allows the device´s impedances of a drain injected mode and a resistive mode to approach each other at a higher LO-power. The developed GaAs MMIC delivers excellent mixer performances in both modes at 60 GHz. It provides a 3.7 dB conversion gain and a 7.8 dB noise figure under 10 dBm LO power for the drain injection mode at a 61 GHz RF frequency, while providing a 7.7 dB conversion loss and a 9.8 dB noise figure under 0 dBm LO power for the resistive mode at a 60.6 GHz RF frequency.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC mixers; field effect MIMIC; gallium arsenide; integrated circuit design; millimetre wave mixers; 3.7 dB; 60 to 61 GHz; 7.7 dB; 7.8 to 9.8 dB; EHF; GaAs; GaAs MIMIC; V-band; drain injected mode; dual-mode MMIC mixer; monolithic mixer; resistive mode; Circuits; Electrodes; Frequency conversion; Impedance; Linearity; MMICs; Mixers; Noise figure; RF signals; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 1999. 21st Annual

Conference_Location

Monterey, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5585-7

Type

conf

DOI

10.1109/GAAS.1999.803740

Filename

803740