Title :
A single supply device technology for wireless applications
Author :
Glass, E. ; Huang, J. ; Martinez, M. ; Hartin, O. ; Valentine, W. ; LaBelle, M. ; Lan, E.
Author_Institution :
Semicond. Product Sector, Motorola Inc., Tempe, AZ, USA
Abstract :
Single supply power amplifiers have become the new paradigm in portable phone handsets due to the recent availability of HBT and pseudo enhancement mode PHEMT technology. We have developed a true enhancement mode heterostructure insulated-gate FET device (HIGFET) which is suitable for use in both digital and analog power amplifiers and in addition to this, shows promise for use in small signal receiver applications.
Keywords :
UHF field effect transistors; UHF power amplifiers; cellular radio; insulated gate field effect transistors; power field effect transistors; radio receivers; semiconductor device reliability; telephone sets; transceivers; 1900 MHz; 900 MHz; HIGFET; analog power amplifiers; digital modulated power amplifiers; enhancement mode; heterostructure IGFET; heterostructure insulated-gate FET; portable phone handsets; single supply device technology; single supply power amplifiers; small signal receiver applications; wireless applications; FETs; Heterojunction bipolar transistors; High power amplifiers; Leakage current; PHEMTs; Power amplifiers; Power generation; Switches; Threshold voltage; Voltage control;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803741
