Fabrication and transport performance of three-branch junction graphene nanostructure

Graphene is shown to exhibit a unique ambipolar transport and ultra high mobility, which can be as high as 230,000 cm²V^-1 s^-1 [1]. Owing to its high mobility, a micrometer-scale ballistic transport at room temperature was demonstrated [2]. Such properties enable graphene to be a suitable channel material for novel functional device utilizing ballistic and ambipolar transport. A device called graphene-based three-branch junction (TBJ) was reported to shows a clear nonlinear transfer characteristics at low temperature, and the polarity of its transfer curve can be controlled by back-gate voltage [3]. Based on the nonlinear operation of TBJ device, it can be applied as various applications such as logic gates, rectifier and frequency mixer [4]. In this paper, we present the fabrication of TBJ device and characterize the transport performance of the fabricated device.