Analysis of PAE 50% highly linear characteristics of new structure transistor "self-aligned gate PHEMT" for W-CDMA application

Author

Sasaki, T. ; Takada, Y. ; Tanabe, Y. ; Nitta, T. ; Kakiuchi, Y. ; Yoshimura, M. ; Fujieda, R. ; Suzuki, T. ; Kayano, H. ; Hirose, M. ; Kitaura, Y.

Author_Institution

Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

131

Lastpage

134

Abstract

This paper describes the analysis of linear performance of PAE 50% for wide band CDMA (W-CDMA) with a new structure FET "Self aligned gate PHEMT (Saga-PHEMT)" which was fabricated in 0.8 /spl mu/m WNx-gate self aligned structure on epitaxial layers. We obtained relations between ACPR and AM-AM/AM-PM conversions as follows; the ACPR is mainly controlled with the AM-AM conversion, and the phase-delay of the AM-PM conversion functions effectively as prevention of ACPR deteriorations which are caused by nonlinear AM-AM conversion.

Keywords

UHF field effect transistors; UHF integrated circuits; UHF power amplifiers; code division multiple access; mobile radio; power HEMT; 0.8 micron; 50 percent; ACPR; AM-AM conversion; AM-PM conversion; Saga-PHEMT; W-CDMA application; WN; WNx-gate self aligned structure; epitaxial layers; highly linear characteristics; linear performance analysis; phase-delay; self-aligned gate PHEMT; wide band CDMA; Capacitance; Epitaxial layers; High power amplifiers; Linearity; Mobile communication; Multiaccess communication; Performance analysis; Power amplifiers; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 1999. 21st Annual

Conference_Location

Monterey, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5585-7

Type

conf

DOI

10.1109/GAAS.1999.803743

Filename

803743