Title :
A compact, 40 GHz 0.5 W power amplifier MMIC
Author :
Campbell, C.F. ; Brown, S.A.
Author_Institution :
TriQuint Semicond., Richardson, TX, USA
Abstract :
A compact (3.48 mm/sup 2/)0.5 W, 40 GHz power amplifier MMIC has been developed utilizing 0.25 /spl mu/m pHEMT technology. At a 6 V drain bias condition, the 2-stage power amplifier achieves 15.6 dB of small signal gain, 26.5 dBm output power at 1 dB gain compression, 27.9 dBm saturated output power and a maximum power added efficiency of 26.6%.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; field effect MIMIC; integrated circuit design; millimetre wave power amplifiers; power integrated circuits; 0.25 micron; 0.5 W; 15.6 dB; 26.6 percent; 40 GHz; 6 V; PHEMT technology; compact design; power amplifier MMIC; pseudomorphic HEMT; two-stage power amplifier; Bonding; Circuits; FETs; Impedance matching; MMICs; Power amplifiers; Power generation; Radio frequency; Scattering parameters; Wire;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803745
