Title :
A single chip 1-W InP HEMT V-band module
Author :
Chen, Y.C. ; Ingram, D.L. ; Yamauchi, D. ; Brunner, B. ; Kraus, J. ; Barsky, M. ; Grundbacher, R. ; Cha, S.K. ; Lai, R. ; Block, T. ; Wojtowicz, M. ; Chin, T.P. ; Allen, B. ; Yen, H.C. ; Streit, D.C.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
We present a world-record V-band single-chip InP HEMT power amplifier module. The two-stage amplifier consists of two channels with 4.48 mm total output periphery. It was fabricated using TRW´s 0.5 /spl mu/m InP HEMT MMIC production process. The two channels were combined by off-chip Wilkinson combiners. Under CW test condition, the amplifier delivered 1 W of output power with 21% power added efficiency and 15 dB associated gain at 62 GHz. The linear gain was 20 dB. We have also characterized a single channel MMIC power amplifier which delivered 515 mW output power with 25% power added efficiency at 62 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MIMIC; indium compounds; millimetre wave power amplifiers; modules; power integrated circuits; 0.15 micron; 1 W; 15 dB; 20 dB; 21 percent; 25 percent; 515 mW; 62 GHz; HEMT power amplifier module; InP; TRW HEMT MMIC production process; V-band module; amplifier performance; fabrication; linear gain; offchip Wilkinson combiners; single chip InP HEMT module; single-channel configuration; two-channel configuration; two-stage amplifier; Frequency; Gain; HEMTs; Indium phosphide; MMICs; Millimeter wave technology; Power amplifiers; Power generation; Production; Space technology;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803747
