Title :
A CW 4 watt Ka-band power amplifier utilizing MMIC multi-chip technology
Author :
Matsunaga, K. ; Miura, I. ; Iwata, N.
Author_Institution :
Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan
Abstract :
This paper describes a 28 GHz power amplifier with 4.5 W output power under CW operation. The amplifier utilizes four fully-matched MMICs, in which 0.35 /spl mu/m-long gate GaAs-based heterojunction FETs are employed. The developed power amplifier also provides the highest CW output power of 3 W over the bandwidth of 2 GHz at Ka-band.
Keywords :
III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium arsenide; impedance matching; integrated circuit design; microwave power amplifiers; 0.35 micron; 2 GHz; 28 GHz; 3 W; 4.5 W; CW operation; GaAs; Ka-band; MMIC multi-chip technology; fully-matched MMICs; heterojunction FETs; output power; power amplifier; Broadband amplifiers; Distributed parameter circuits; Equivalent circuits; FETs; Heterojunctions; Impedance matching; MMICs; Power amplifiers; Power generation; Power transmission lines;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803748
