Analysis of surface iterated kink phenomena of GaAs MESFETs

Author

Horio, K. ; Wakabayashi, A.

Author_Institution

Fac. of Syst. Eng., Shibaura Inst. of Technol., Tokyo, Japan

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

167

Lastpage

170

Abstract

Surface-state effects on kink or sub-breakdown phenomena in GaAs MESFETs are studied by two-dimensional simulation. It is shown that the kink could arise due to space-charge effects originated from impact ionization of holes and the following hole trapping by the surface states. The onset voltage for current rise depends on the nature of surface states which strongly affects the potential profiles. Transient or dynamic simulation indicates that the trap related kink phenomenon is a rather slow process. Substrate-related dynamic behavior including kink region is also analyzed.

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; hole traps; impact ionisation; semiconductor device breakdown; semiconductor device models; space-charge-limited conduction; surface states; GaAs; MESFETs; dynamic simulation; hole trapping; impact ionization; potential profiles; space-charge effects; sub-breakdown phenomena; substrate-related dynamic behavior; surface iterated kink phenomena; surface states; transient simulation; trap related kink phenomenon; two-dimensional simulation; Electric breakdown; Electrostatic discharge; Energy states; Gallium arsenide; Impact ionization; MESFETs; Modeling; Poisson equations; Surface treatment; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 1999. 21st Annual

Conference_Location

Monterey, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5585-7

Type

conf

DOI

10.1109/GAAS.1999.803751

Filename

803751