Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs

Author

Menozzi, R. ; Dieci, D. ; Messori, M. ; Sozzi, G. ; Lanzieri, C. ; Canali, C.

Author_Institution

Dipt. di Ingegneria dell´Inf., Parma Univ., Italy

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

171

Lastpage

174

Abstract

This work shows results of multi-bias-point DC hot electron stress of power AlGaAs/GaAs HFETs. Both the gate reverse current and the drain-gate electric field are varied independently in order to study the bias dependence of device degradation. Numerical drift-diffusion simulations are used to explain the degradation behavior.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; hot carriers; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device models; semiconductor device reliability; AlGaAs-GaAs; DC hot electron stress; bias dependence; bias point dependence; degradation behavior; device degradation; drain-gate electric field; drift-diffusion simulations; gate reverse current; hot electron degradation; microwave FETs; power HFETs; Breakdown voltage; Degradation; Electrons; FETs; Gallium arsenide; HEMTs; MODFETs; Numerical simulation; Stress; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 1999. 21st Annual

Conference_Location

Monterey, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5585-7

Type

conf

DOI

10.1109/GAAS.1999.803752

Filename

803752

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3301643