DocumentCode
3301737
Title
Fully-integrated 5/2 GHz GaAs MESFET transmitter MMIC for high-capacity wireless local area network applications
Author
Weiner, J.S. ; Huan-Shang Tsai ; Youn-Kai Chen ; Busking, E. ; Tieman, T. ; Kruys, J.
Author_Institution
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
fYear
1999
fDate
17-20 Oct. 1999
Firstpage
203
Lastpage
205
Abstract
A 5.2 GHz gallium arsenide MESFET transmitter monolithic microwave integrated circuit is demonstrated. Gain and 1 dB compression point are as high as 14 dB and +11 dBm respectively.
Keywords
III-V semiconductors; MESFET integrated circuits; field effect MMIC; gallium arsenide; radio access networks; radio transmitters; wireless LAN; 1 dB compression point; 14 dB; 5.2 GHz; GaAs; III-V semiconductors; MESFET transmitter; WLAN; high-capacity network; monolithic microwave integrated circuit; Circuits; Costs; Gallium arsenide; MESFETs; MMICs; Power amplifiers; Power generation; Quadrature amplitude modulation; Transmitters; Wireless LAN;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs IC Symposium, 1999. 21st Annual
Conference_Location
Monterey, CA, USA
ISSN
1064-7775
Print_ISBN
0-7803-5585-7
Type
conf
DOI
10.1109/GAAS.1999.803758
Filename
803758
Link To Document