Title :
Status of metamorphic In/sub x/Al/sub 1-x/As/In/sub x/Ga/sub 1-x/As HEMTs
Author :
Cappy, A. ; Cordier, Y. ; Bollaert, S. ; Zaknoune, M.
Author_Institution :
Dept. Hyperfrequences et Semicond., CNRS, Villeneuve d´Ascq, France
Abstract :
Metamorphic HEMTs are attractive candidates for microwave and mm-wave low noise and power applications. Using the metamorphic concept, high quality relaxed heterostructures with arbitrary chosen In content can be grown. Metamorphic discrete HEMTs and metamorphic MMICs showing electrical performance similar to InP based devices and circuits have been processed. Preliminary reliability data show that the degradation mechanisms are likely due to the device process technology and not the metamorphic nature of the active layer.
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect MIMIC; field effect MMIC; gallium arsenide; indium compounds; integrated circuit reliability; microwave field effect transistors; millimetre wave field effect transistors; power HEMT; power integrated circuits; semiconductor device noise; semiconductor device reliability; III-V semiconductors; InAlAs-InGaAs; active layer; degradation mechanisms; device process technology; discrete HEMTs; low noise applications; metamorphic HEMTs; metamorphic MMICs; power applications; relaxed heterostructures; reliability data; Buffer layers; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; MODFETs; Rough surfaces; Surface roughness;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803761
