Status of metamorphic In/sub x/Al/sub 1-x/As/In/sub x/Ga/sub 1-x/As HEMTs

Author

Cappy, A. ; Cordier, Y. ; Bollaert, S. ; Zaknoune, M.

Author_Institution

Dept. Hyperfrequences et Semicond., CNRS, Villeneuve d´Ascq, France

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

217

Lastpage

220

Abstract

Metamorphic HEMTs are attractive candidates for microwave and mm-wave low noise and power applications. Using the metamorphic concept, high quality relaxed heterostructures with arbitrary chosen In content can be grown. Metamorphic discrete HEMTs and metamorphic MMICs showing electrical performance similar to InP based devices and circuits have been processed. Preliminary reliability data show that the degradation mechanisms are likely due to the device process technology and not the metamorphic nature of the active layer.

Keywords

HEMT integrated circuits; III-V semiconductors; field effect MIMIC; field effect MMIC; gallium arsenide; indium compounds; integrated circuit reliability; microwave field effect transistors; millimetre wave field effect transistors; power HEMT; power integrated circuits; semiconductor device noise; semiconductor device reliability; III-V semiconductors; InAlAs-InGaAs; active layer; degradation mechanisms; device process technology; discrete HEMTs; low noise applications; metamorphic HEMTs; metamorphic MMICs; power applications; relaxed heterostructures; reliability data; Buffer layers; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; MODFETs; Rough surfaces; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 1999. 21st Annual

Conference_Location

Monterey, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5585-7

Type

conf

DOI

10.1109/GAAS.1999.803761

Filename

803761