Title :
1000 h stable operation of AlGaAs/GaAs light emitting diodes on Si substrates
Author :
Yoshimi, S. ; Wada, N. ; Shao, C.L. ; Iwabu, K. ; Sakai, S.
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokushima Univ., Japan
Abstract :
An AlGaAs/GaAs light emitting diode (LED) fabricated on Si substrate operated for more than 1000 h at room temperature without any significant degradation. An UCGAS (undercut GaAs on Si) structure has been used in the LED structure to reduce both the thermal stress and the dislocation density. An UCGAS LED does not show any significant degradation even after 1000 h of operation, while mesa-LED degrades quickly. This result demonstrates that reliable AlGaAs/GaAs light emitting devices can be fabricated on Si substrates.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; light emitting diodes; reliability; silicon; 1000 hr; AlGaAs-GaAs-Si; Si substrates; UCGAS LED; dislocation density; light emitting diodes; reliable LEDs; room temperature; thermal stress; undercut GaAs on Si; Contacts; Gallium arsenide; Light emitting diodes; MOCVD; Photoluminescence; Power generation; Temperature; Textiles; Thermal degradation; Thermal stresses;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235265
