Title :
Millimeter-wave low noise metamorphic HEMT amplifiers and devices on GaAs substrates
Author :
Marsh, P. ; Kang, S. ; Wohlert, R. ; McIntosh, P.M. ; Hoke, W.E. ; McTaggart, R.A. ; Lardizabal, S.M. ; Leoni, R.E., III ; Whelan, C.S. ; Lemonias, P.J. ; Kazior, T.E.
Author_Institution :
Adv. Device Center, Raytheon Microelectron., Andover, MA, USA
Abstract :
An excellent 0.61 dB minimum noise figure and 11.8 dB associated gain at 26 GHz, have been obtained for a InAlAs/InGaAs metamorphic HEMT on a GaAs substrate. Low-noise amplifiers show under 1.8 dB noise figure with gain greater than 24 dB across 27-32 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit noise; millimetre wave amplifiers; 0.61 dB; 1.8 dB; 11.8 dB; 24 dB; 27 to 32 GHz; GaAs; III-V semiconductors; InAlAs-InGaAs; low noise metamorphic HEMT amplifiers; low-noise amplifiers; metamorphic HEMT; millimeter-wave amplifiers; minimum noise figure; Atomic force microscopy; Gallium arsenide; Indium; Low-noise amplifiers; Millimeter wave technology; Noise figure; Rough surfaces; Surface morphology; Surface roughness; mHEMTs;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803762
