DocumentCode
3301819
Title
High power and gain at 35 GHz utilizing an InAlGaAs-In/sub 0.32/Ga/sub 0.68/As metamorphic HEMT
Author
Whelan, C.S. ; Hoke, W.E. ; McTaggart, R.A. ; Lyman, P.S. ; Marsh, P.F. ; Lichwala, S.J. ; Kazior, T.E.
Author_Institution
RF Components, Raytheon Co., Andover, MA, USA
fYear
1999
fDate
17-20 Oct. 1999
Firstpage
225
Lastpage
228
Abstract
Low on-state breakdown voltage has limited the metamorphic HEMT´s power by restricting drain voltages to less than or equal to 3.5 V. We have overcome this limitation and demonstrated high breakdown voltage metamorphic HEMTs (32% In channel) which allow operation at V/sub ds/=6 V, resulting in a power density of 650 mW/mm at 35 GHz.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; semiconductor device breakdown; 35 GHz; 6 V; EHF; InAlGaAs-In/sub 0.32/Ga/sub 0.68/As; MM-wave device; high breakdown voltage; high gain; high power; metamorphic HEMT; Breakdown voltage; Gain; Gallium arsenide; HEMTs; Indium; PHEMTs; Power generation; Radio frequency; Testing; mHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs IC Symposium, 1999. 21st Annual
Conference_Location
Monterey, CA, USA
ISSN
1064-7775
Print_ISBN
0-7803-5585-7
Type
conf
DOI
10.1109/GAAS.1999.803764
Filename
803764
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