Title :
104 and 134 GHz InGaP/InGaAs HBT oscillators
Author :
Uchida, K. ; Aoki, I. ; Matsuura, H. ; Yakihara, T. ; Kobayashi, S. ; Oka, S. ; Fujita, T. ; Miura, A.
Author_Institution :
Teratec Corp., Tokyo, Japan
Abstract :
In this paper, the development of 104 and 134 GHz InGaP/InGaAs heterojunction bipolar transistor oscillators is reported. The 104 GHz oscillator exhibits an output power of -3.4 dBm with a phase noise of -95 dBc/Hz at 1 MHz offset. The 134 GHz oscillator exhibits an output power of -10.4 dBm with a phase noise of -72 dBc/Hz at 1 MHz offset. To our knowledge, the 134 GHz oscillator is the highest-frequency fundamental mode oscillator using bipolar device technology ever reported.
Keywords :
III-V semiconductors; bipolar MIMIC; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit design; integrated circuit noise; millimetre wave oscillators; phase noise; 104 GHz; 134 GHz; EHF; InGaP-InGaAs; InGaP/InGaAs HBT oscillators; MM-wave oscillators; bipolar device technology; fundamental mode oscillator; heterojunction bipolar transistor oscillators; phase noise; Frequency; HEMTs; Heterojunction bipolar transistors; Indium gallium arsenide; Millimeter wave communication; Millimeter wave measurements; Millimeter wave technology; Oscillators; Phase noise; Power generation;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803766
