DocumentCode :
3301883
Title :
Injection-locked oscillator as frequency multiplier for millimeter-wave applications
Author :
The Linh Nguyen
Author_Institution :
Nortel Networks, Ottawa, Ont., Canada
fYear :
1999
fDate :
17-20 Oct. 1999
Firstpage :
245
Lastpage :
248
Abstract :
This paper describes the design of an injection-locked oscillator and demonstrates its use as a compact and efficient doubler or a tripler. The ILO has a free-running oscillating frequency of 28.5 GHz and output power of 7 dBm. With second subharmonic injection of 11 dBm, it produces >7 dBm from 26.5 GHz to 33.5 GHz with a maximum of 10 dBm at 30.5 GHz. With third subharmonic injection of 11 dBm, it produces >1 dBm from 28.5 GHz to 32 GHz with a maximum of 4 dBm at 30 GHz. The tripled output at 30 GHz has a spot noise of -102 dBc/Hz at 100 kHz offset. The MMIC was fabricated utilizing Nortel Networks´ GaAs/InGaP HBT with ft of 70 GHz and fmax of 110 GHz.
Keywords :
III-V semiconductors; MMIC frequency convertors; MMIC oscillators; bipolar MIMIC; frequency multipliers; gallium arsenide; indium compounds; injection locked oscillators; millimetre wave frequency convertors; millimetre wave oscillators; 110 GHz; 26.5 to 33.5 GHz; 28.5 GHz; 70 GHz; GaAs-InGaP; HBT; III-V semiconductors; free-running oscillating frequency; frequency multiplier; injection-locked oscillator; millimeter-wave applications; output power; second subharmonic injection; spot noise; tripled output; Bandwidth; Frequency conversion; Heterojunction bipolar transistors; Injection-locked oscillators; MMICs; Millimeter wave technology; Millimeter wave transistors; Phase noise; Power generation; Wireless communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
ISSN :
1064-7775
Print_ISBN :
0-7803-5585-7
Type :
conf
DOI :
10.1109/GAAS.1999.803768
Filename :
803768
Link To Document :
بازگشت