Title :
State-of-the-art low noise performance of 94 GHz monolithic amplifiers using 0.1 mu m InGaAs/GaAs pseudomorphic HEMT technology
Author :
Wang, H. ; Tan, K. ; Dow, G.S. ; Berenz, J. ; Garske, D. ; Rodgers, P. ; Hayashibara, G.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
W-band monolithic one- and two-stage low-noise amplifiers (LNAs) using 0.1- mu m T-gate InGaAs/GaAs pseudomorphic HEMT (high electron mobility transistor) technology have been developed which demonstrate state-of-the-art low-noise performance at this frequency. At room temperature, the one-stage amplifier has a measured noise figure of 3.5 dB with an associated small signal gain of 5.3 dB and the two-stage amplifier has a measured 4.7-dB noise figure with 11-dB associated gain at 94 GHz. These are the best noise performances for W-band monolithic LNAs to date. The success of this development is ascribed to excellent device characteristics and a rigorous MMIC (monolithic microwave integrated circuit) design/analysis methodology.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; 0.1 micron; 11 dB; 3.5 dB; 4.7 dB; 5.3 dB; 94 GHz; EHF; InGaAs-GaAs; LNA; MM-wave type; MMIC; T-gate device; W-band; high electron mobility transistor; low noise performance; low-noise amplifiers; millimetre wave; monolithic amplifiers; monolithic microwave integrated circuit; one-stage amplifier; pseudomorphic HEMT technology; two-stage amplifier; Gain measurement; Gallium arsenide; HEMTs; Indium gallium arsenide; Low-noise amplifiers; MMICs; MODFETs; Noise figure; Noise measurement; PHEMTs;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235271
