Title :
A lateral P-SI-N diode SPDT switch for Ka-band applications
Author :
Tanabe, M. ; Iwanaga, J.S. ; Ishii, M. ; Miyatsuji, K. ; Ota, Y. ; Ueda, D.
Author_Institution :
Semicond. Device Res. Center, Matsushita Electron. Corp., Osaka, Japan
Abstract :
We report on lateral GaAs P-Semi-Insulator-N (P-SI-N) diode switches. The single P-SI-N structure showed an insertion loss of as low as 0.66 dB and the implemented SPDT switch comprised of the diodes exhibited an insertion loss of as low as 1.8 dB and isolation of 35 dB at 30 GHz. The proposed P-SI-N structure was easily formed by an ion-implantation technique and makes it possible to integrate with any active devices.
Keywords :
III-V semiconductors; MIMIC; MMIC; gallium arsenide; ion implantation; microwave diodes; microwave switches; millimetre wave diodes; p-i-n diodes; semiconductor switches; 0.66 dB; 1.8 dB; 30 GHz; GaAs; GaAs diode switches; Ka-band applications; PIN diode; SPDT switch; insertion loss; ion-implantation technique; lateral P-SI-N diode; monolithic IC; single P-SI-N structure; Communication switching; Gallium arsenide; Gold alloys; Implants; Insertion loss; Insulation; P-i-n diodes; Resists; Semiconductor diodes; Switches;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803772
