DocumentCode :
3301980
Title :
High resolution track and hold for broadband wireless applications
Author :
Shah, S. ; McGarry, S. ; Sitch, J.
Author_Institution :
Nortel Networks, Ottawa, Ont., Canada
fYear :
1999
fDate :
17-20 Oct. 1999
Firstpage :
277
Lastpage :
280
Abstract :
The purpose of this paper is to describe and compare GaAs-InGaP HBT high sample rate track and hold amplifier designs. These are building blocks targeted to be used in next generation data conversion circuits. The track and hold designs are optimized to operate at 600 MSPS with 10 bits effective resolution. The two designs were fabricated to accommodate 0.5 Vpp and 1.0 Vpp full-scale voltage swings. The design with input signal requirement of 1.0 Vpp generates second and third harmonic distortion below -74 dBc at 60 MHz during single-tone test. During two-tone measurements, the device generated third order intermodulation distortion of -72 dBc with carriers centered around 61 MHz and -54 dBc with carriers close to Nyquist frequency. With a full-scale swing of 4.0 Vpp, the device generated third harmonic distortion of -45 dBc at 60 MHz input frequency. The pedestal during hold is less than 1 mV and droop rate is negligible. The designs were fabricated utilizing Nortel Network´s GaAs-InGaP HBT with f/sub t/ of 70 GHz and fmax of 110 GHz.
Keywords :
III-V semiconductors; analogue-digital conversion; bipolar integrated circuits; gallium arsenide; harmonic distortion; heterojunction bipolar transistors; high-speed integrated circuits; intermodulation distortion; radio equipment; sample and hold circuits; wideband amplifiers; 110 GHz; 60 MHz; 70 GHz; ADC; GaAs-InGaP; GaAs-InGaP HBT process; Nortel Network process; broadband wireless applications; building blocks; data conversion circuits; harmonic distortion; high resolution track/hold; high sample rate; intermodulation distortion; third order IMD; track/hold amplifier designs; Broadband amplifiers; Circuits; Data conversion; Design optimization; Frequency; Harmonic distortion; Heterojunction bipolar transistors; Signal resolution; Target tracking; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
ISSN :
1064-7775
Print_ISBN :
0-7803-5585-7
Type :
conf
DOI :
10.1109/GAAS.1999.803774
Filename :
803774
Link To Document :
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