High speed AlGaAs/GaAs complementary HBT technology realized by multiple MBE growth and merged processing

Author

Farley, C.W. ; Anderson, R.J. ; Bernescut, R.B. ; Grant, R.W. ; Chang, M.F. ; Wang, K.C. ; Nubling, R.B. ; Sheng, N.H.

Author_Institution

Rockwell Int. Sci. Center, Thousand Oaks, CA, USA

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

927

Lastpage

930

Abstract

A high-performance monolithic Npn/Pnp complementary HBT (heterojunction bipolar transistor) technology involving multiple MBE (molecular beam epitaxy) growths has been developed. Many of the process steps have been merged to simplify concurrent fabrication of Npn and Pnp devices. Pnp devices exhibit f/sub T/=20 GHz and f/sub max/=19 GHz. Npn devices show f/sub T/=51 GHz and f/sub max/=60 GHz. These cutoff frequencies are 2 to 3 times values previously reported for monolithically integrated Npn and Pnp devices. For the first time, integrated circuits operating at microwave frequencies have been fabricated from both types of devices on the same wafer. Npn-based direct coupled feedback amplifiers (gain blocks) show a gain of 11 dB and a 3-dB bandwidth of 12 GHz. Pnp-based gain blocks show a gain of 8 dB and a 3-dB bandwidth of 6 GHz.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; integrated circuit technology; microwave amplifiers; molecular beam epitaxial growth; semiconductor growth; solid-state microwave devices; 11 dB; 12 GHz; 19 GHz; 20 GHz; 3-dB bandwidth; 51 GHz; 6 GHz; 60 GHz; 8 dB; AlGaAs-GaAs; Npn devices; Pnp devices; complementary HBT technology; cutoff frequencies; direct coupled feedback amplifiers; gain blocks; integrated circuits; maximum frequency of oscillation; merged processing; microwave frequencies; multiple MBE growth; Bandwidth; Coupling circuits; Cutoff frequency; Fabrication; Gain; Gallium arsenide; Heterojunction bipolar transistors; Microwave frequencies; Microwave integrated circuits; Molecular beam epitaxial growth;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235274

Filename

235274