Title :
A 3.3 V, 21 Gb/s PRBS generator in AlGaAs/GaAs HBT technology
Author :
Chen, M.G. ; Notthoff, J.K.
Author_Institution :
Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA
Abstract :
We present a pseudo-random bit sequence (PRBS) generator that outputs a 2/sup 7/-1 bit pattern at rates up to 21 Gb/s. The circuit is implemented in a 40 GHz GaAs HBT process, operates from a single 3.3 V power supply, and consumes only 1.1 W of power. The circuit advances the state of the art by demonstrating the feasibility of low-voltage/low-power design techniques in complex high-speed circuits, and results in the highest clock-speed-to-f/sub t/ ratio for a complex GaAs HBT logic circuit.
Keywords :
III-V semiconductors; aluminium compounds; bipolar digital integrated circuits; bipolar logic circuits; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; low-power electronics; pulse generators; 1.1 W; 21 Gbit/s; 3.3 V; 40 GHz; AlGaAs-GaAs; AlGaAs/GaAs HBT technology; GaAs HBT logic circuit; PRBS generator; high-speed circuit; low-power design techniques; low-voltage design techniques; pseudo-random bit sequence generator; Bit rate; Circuit testing; Clocks; Gallium arsenide; Heterojunction bipolar transistors; Logic circuits; Power dissipation; Power supplies; Space technology; Voltage;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803775
