Title :
Nano-patterned high-responsivity GaAs metal-semiconductor-metal photodetector
Author :
Karar, Ayman ; Tan, Chee Leong ; Alameh, Kamal ; Lee, Yong Tak
Author_Institution :
Electron Sci. Res. Inst., Edith Cowan Univ., Joondalup, WA, Australia
Abstract :
In this paper, we use the finite difference time-domain (FDTD) method to optimize the light absorption of an ultrafast nano-grating plasmonic GaAs metal-semiconductor-metal photodetector (MSM-PD) employing double metal nano-gratings. The geometry of the MSM-PD is theoretically investigated, leading to improved light absorption near the design wavelength of GaAs due to plasmon-assisted electric and magnetic field concentration through a subwavelength aperture. Simulation results show up to 8- and 21-times light absorption enhancement for the single and double nano-grating structure, respectively, in comparison to conventional MSM-PDs. Experimentally, more than 4 times enhancement in photocurrent is demonstrated for a single top nano-grating MSM-PD in comparison with conventional MSM-PDs.
Keywords :
III-V semiconductors; diffraction gratings; finite difference time-domain analysis; gallium arsenide; light absorption; metal-semiconductor-metal structures; nanopatterning; nanophotonics; optical design techniques; photoconductivity; photodetectors; plasmonics; GaAs; design wavelength; double metal nanogratings; finite difference time-domain method; light absorption; nanopatterned high-responsivity metal-semiconductor-metal photodetector; photocurrent; plasmon-assisted electric field concentration; plasmon-assisted magnetic field concentration; subwavelength aperture; ultrafast nanograting plasmonics; Apertures; Arrays; Gallium arsenide; Gratings; Indexes; Magnetic confinement; Magnetic domains; FDTD simulation; MSM-PD; Subwavelength aperture; surface plasmon polaritons;
Conference_Titel :
High Capacity Optical Networks and Enabling Technologies (HONET), 2011
Conference_Location :
Riyadh
Print_ISBN :
978-1-4577-1170-1
DOI :
10.1109/HONET.2011.6149782
