• DocumentCode
    3302053
  • Title

    Tunable linearity characteristics of a DC-3 GHz InP HBT active feedback amplifier

  • Author

    Kobayashi, K.W. ; Gutierrez-Aitken, A. ; Grossman, P.C. ; Yang, L. ; Kaneshiro, E. ; Block, T.R. ; Oki, A.K. ; Streit, D.C.

  • Author_Institution
    Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
  • fYear
    1999
  • fDate
    17-20 Oct. 1999
  • Firstpage
    291
  • Lastpage
    294
  • Abstract
    This paper reports on the linearity characteristics of a DC-3 GHz InP HBT amplifier with tunable active feedback. By electronically tuning the active feedback of the amplifier, a 3.5 dB improvement in IP3 over a broadband is obtained compared to a purely resistive feedback design with the same do power. At an optimal tuning bias, the amplifier achieves a DC-3 GHz bandwidth, 9.5 dB gain, a P/sub 1dB/ of 13.3 dBm, and an IP3 of 31 dBm at 1 GHz while consuming a modest 35 mA through a 5 V supply. An lP3/P/sub DC/ ratio of 6.6:1 is achieved which is more than double that obtained from an equivalent conventional resistive feedback design. The improved linearity is obtained with no substantial impact on the MMIC size or DC power consumption. Under large signal operation the amplifier was also found to obtain 14-15 dB improvement in C/IM3 ratio. This simple MMIC technique is a cost effective means for improving the performance of standard linear MMIC products.
  • Keywords
    III-V semiconductors; MMIC amplifiers; bipolar MMIC; circuit tuning; feedback amplifiers; heterojunction bipolar transistors; indium compounds; wideband amplifiers; 3 GHz; 35 mA; 5 V; 9.5 dB; InP; InP HBT active feedback amplifier; MMIC; broadband operation; electronic tuning; large signal operation; power consumption; tunable active feedback; tunable linearity characteristics; Bandwidth; Broadband amplifiers; Energy consumption; Feedback; Gain; Heterojunction bipolar transistors; Indium phosphide; Linearity; MMICs; Power amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    GaAs IC Symposium, 1999. 21st Annual
  • Conference_Location
    Monterey, CA, USA
  • ISSN
    1064-7775
  • Print_ISBN
    0-7803-5585-7
  • Type

    conf

  • DOI
    10.1109/GAAS.1999.803777
  • Filename
    803777