DocumentCode :
3302053
Title :
Tunable linearity characteristics of a DC-3 GHz InP HBT active feedback amplifier
Author :
Kobayashi, K.W. ; Gutierrez-Aitken, A. ; Grossman, P.C. ; Yang, L. ; Kaneshiro, E. ; Block, T.R. ; Oki, A.K. ; Streit, D.C.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
fYear :
1999
fDate :
17-20 Oct. 1999
Firstpage :
291
Lastpage :
294
Abstract :
This paper reports on the linearity characteristics of a DC-3 GHz InP HBT amplifier with tunable active feedback. By electronically tuning the active feedback of the amplifier, a 3.5 dB improvement in IP3 over a broadband is obtained compared to a purely resistive feedback design with the same do power. At an optimal tuning bias, the amplifier achieves a DC-3 GHz bandwidth, 9.5 dB gain, a P/sub 1dB/ of 13.3 dBm, and an IP3 of 31 dBm at 1 GHz while consuming a modest 35 mA through a 5 V supply. An lP3/P/sub DC/ ratio of 6.6:1 is achieved which is more than double that obtained from an equivalent conventional resistive feedback design. The improved linearity is obtained with no substantial impact on the MMIC size or DC power consumption. Under large signal operation the amplifier was also found to obtain 14-15 dB improvement in C/IM3 ratio. This simple MMIC technique is a cost effective means for improving the performance of standard linear MMIC products.
Keywords :
III-V semiconductors; MMIC amplifiers; bipolar MMIC; circuit tuning; feedback amplifiers; heterojunction bipolar transistors; indium compounds; wideband amplifiers; 3 GHz; 35 mA; 5 V; 9.5 dB; InP; InP HBT active feedback amplifier; MMIC; broadband operation; electronic tuning; large signal operation; power consumption; tunable active feedback; tunable linearity characteristics; Bandwidth; Broadband amplifiers; Energy consumption; Feedback; Gain; Heterojunction bipolar transistors; Indium phosphide; Linearity; MMICs; Power amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
ISSN :
1064-7775
Print_ISBN :
0-7803-5585-7
Type :
conf
DOI :
10.1109/GAAS.1999.803777
Filename :
803777
Link To Document :
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